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Characterization of patterned epitaxial layers of GaAs grown by laser atomic layer epitaxy

レーザー科学研究 Volume 12 Page 114-116
published_at 1990
2007020178.pdf
[fulltext] 2.45 MB
Title
レーザー原子層エピタキシーによるGaAsパターン化成長層の評価
Characterization of patterned epitaxial layers of GaAs grown by laser atomic layer epitaxy
Creators Miyoshi Tadaki
Creators Iimura Yasufumi
Creators Iwai Sohachi
Creators Aoyagi Yoshinobu
Creators Namba Susumu
Raman spectra were measured at 300K in GaAs crystal layers grown selectively on a substrate by laser atomic layer epitaxy to characterize their quality. Raman spectra of the peripheral parts of the epitaxial layers are similar to those of the central parts of the layers. This result indicates that these layers are of uniform quality.
Languages jpn
Resource Type journal article
Publishers 理化学研究所
Date Issued 1990
File Version Version of Record
Access Rights open access
Relations
[ISSN]0289-8411
[NCID]AN0035159X
Schools 大学院理工学研究科(工学)