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Characterization of epitaxial layers grown by laser atomic layer epitaxy

レーザー科学研究 Volume 11 Page 129-131
published_at 1989
2007020177.pdf
[fulltext] 2.15 MB
Title
レーザー単原子層成長法による成長層の特性評価
Characterization of epitaxial layers grown by laser atomic layer epitaxy
Creators Miyoshi Tadaki
Creators Iimura Yasufumi
Creators Iwai Sohachi
Creators Aoyagi Yoshinobu
Creators Segawa Yusaburo
Creators Namba Susumu
Raman spectra were measured at 300K in thin layers grown by laser atomic layer epitaxy in order to characterize the layers of alloy semiconductors. Two Raman lines were observed in Ga_<1-x>Al_xAs layers. The molar fractions x of Al were determined from the frequency shift of Raman lines: x=0.20 for the laser-irradiated region and x=0.35 for the nonirradiated region.
Languages jpn
Resource Type journal article
Publishers 理化学研究所
Date Issued 1989
File Version Version of Record
Access Rights open access
Relations
[ISSN]0289-8411
[NCID]AN0035159X
Schools 大学院理工学研究科(工学)