Contents Menu

Preparation of Co-Cr films using electron-cyclotron resonance microwave plasma sputtering: Effects of plasma control using a magnetic field

Journal of Magnetics Society of Japan Volume 22 Issue 2 Page 69-74
published_at 1998
Title
ECRスパッタ法を用いたCo-Cr垂直磁気異方性膜の作製 : 磁界によるプラズマ制御の効果
Preparation of Co-Cr films using electron-cyclotron resonance microwave plasma sputtering: Effects of plasma control using a magnetic field
Creators 中村 哲也
Creators Yamamoto Setsuo
Creators 佐藤 王高
Creators Kurisu Hiroki
Creators 松浦 満
Creators 前田 安
Creators 廣野 滋
Creator Keywords
ECR sputtering Co-Cr perpendicular recording magnetic field compopsitional separation magnetic microstructure
Co-Cr perpendicular magnetic anisotropy films were deposited by sputtering using electron-cyclotron resonance microwave plasma. The effects of ion acceleration voltage for bombardment of the substrate during film deposition on the magnetic microstructure and magnetic properties of the Co-Cr films were investigated. The ion acceleration voltage was controlled by magnetic field distribution in a deposition chamber. Co-Cr films with a fine magnetic structure in which the compositional separation into a Cr-enriched region and a Co-enriched region was enhanced within grains were achieved under a cusp magnetic field in which the ion acceleration voltage was about 10 V.
Languages jpn
Resource Type journal article
Publishers 日本応用磁気学会
Date Issued 1998
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0285-0192
[NCID]AN0031390X
info:doi/10.3379/jmsjmag.22.69
[isVersionOf] [URI]http://www.wdc-jp.com/msj/journal/index.html
Schools 大学院理工学研究科(工学)