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Effect of electric field on dynamics of excitons in GaAs/Ga_<0.6>Al_<0.4>As multi-quantum-well structure

レーザー科学研究 Volume 8 Page 103-105
published_at 1986
2008010002.pdf
[fulltext] 1.02 MB
Title
GaAs/Ga_<0.6>Al_<0.4>As 量子井戸での励起子ダイナミクスの電界効果
Effect of electric field on dynamics of excitons in GaAs/Ga_<0.6>Al_<0.4>As multi-quantum-well structure
Creators Miyoshi Tadaki
Creators Aoyagi Yoshinobu
Creators Yamada Atsushi
Creators Segawa Yusaburo
Creators Namba Susumu
Creators Sano Naokatsu
The decay time of luminescence from a multi-quantum well has been measured at 20K by using a CW mode-locked dye laser and a synchroscan-streak camera. The decay time is found to increase when an electric field is applied. The increase is considered to be attributable to the field-induced carrier separation. The present results are compared with those reported by other researchers.
Languages jpn
Resource Type journal article
Publishers 理化学研究所
Date Issued 1986
File Version Version of Record
Access Rights open access
Relations
[ISSN]0289-8411
[NCID]AN0035159X
Schools 大学院理工学研究科(工学)