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Localized biexcitons in AlGaN ternary alloy semiconductors

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 1 Page 29-37
published_at 2005-10
A040056000104.pdf
[fulltext] 469 KB
Title
AlGaN混晶半導体における局在励起子分子
Localized biexcitons in AlGaN ternary alloy semiconductors
Creators Nakamura Kohzo
Creators Murotani Hideaki
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Source Identifiers
Creator Keywords
exciton biexciton localization biexciton binding energy Stokes shift delocalization
Excitonic optical properties of Ga-rich AlxGa1-xN ternary alloy epitaxial layers with aluminum compositions of x = 0.019, 0.038, 0.057, 0.077, and 0.092 have been studied by means of photoluminescence (PL), time-resolved PL, and PL excitation spectroscopy. The luminescence line due to radiative recombination of biexcitons was clearly observed for all of five samples. On the basis of two-photon absorption of biexcitons, a Stokes shift of biexcitons and binding energy of biexcitons were determined quantitatively as a function of aluminum composition. The biexciton localization due to alloy disorder resulted in a strong enhancement of the biexciton binding energy.
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2005-10
File Version Version of Record
Access Rights open access
Relations
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部