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Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 1 Page 57-61
published_at 2001-10
A030052000108.pdf
[fulltext] 412 KB
Title
In_xGa_1-xN/GaN 多重量子井戸構造におけるストークスシフトの温度依存性
Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells
Creators Sasaki Chiharu
Creators Iwata Masaki
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Creators Watanabe Satoshi
Creators Minsky M. S.
Creators Takeuchi Tetsuya
Creators Yamada Norihide
Source Identifiers
Creator Keywords
In_xGa_1-xN GaN multiple quantum wells photoluminescence excitation Stokes shift compositional fluctuation localization
Luminescence properties of InxGa1-xN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence excitation (PLE) spectroscopy. The clear peak due to the absorption of InxGa1-xN quantum wells was observed in the PLE spectrum of the MQW sample with x < 0.01 at 4 K, and the Stokes shift was estimated to be 63 meV. It was found that the Stokes shift was independent of temperature up to 300 K. This result suggests that the large Stokes shift cannot be explained only by the effect of carrier localization due to compositional fluctuation.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2001-10
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部