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Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 1 Page 57-61

published_at 2001-10

A030052000108.pdf

[fulltext] 412 KB

Title

In_xGa_1-xN/GaN 多重量子井戸構造におけるストークスシフトの温度依存性

Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells

Creators Sasaki Chiharu

Creators Iwata Masaki

Creators Yamada Yoichi

Creators Taguchi Tsunemasa

Creators Watanabe Satoshi

Creators Minsky M. S.

Creators Takeuchi Tetsuya

Creators Yamada Norihide

Source Identifiers

Creator Keywords

In_xGa_1-xN GaN multiple quantum wells photoluminescence excitation Stokes shift compositional fluctuation localization

Luminescence properties of InxGa1-xN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence excitation (PLE) spectroscopy. The clear peak due to the absorption of InxGa1-xN quantum wells was observed in the PLE spectrum of the MQW sample with x < 0.01 at 4 K, and the Stokes shift was estimated to be 63 meV. It was found that the Stokes shift was independent of temperature up to 300 K. This result suggests that the large Stokes shift cannot be explained only by the effect of carrier localization due to compositional fluctuation.

Subjects

工学 ( Other)

Languages jpn

Resource Type departmental bulletin paper

Publishers 山口大学工学部

Date Issued 2001-10

File Version Version of Record

Access Rights open access

Relations

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/

Schools 工学部