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Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Journal of applied physics Volume 115 Issue 5 Page 053509-
published_at 2014
2014010716.pdf
[fulltext] 1.09 MB
Title
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration
Creators Kurai Satoshi
Creators Ushijima Fumitaka
Creators Miyake Hideto
Creators Hiramatsu Kazumasa
Creators Yamada Yoichi
Languages eng
Resource Type journal article
Publishers American Institute of Physics
Date Issued 2014
Rights
(C) 2014 AIP Publishing LLC()
File Version Version of Record
Access Rights open access
Relations
[ISSN]0021-8979
[NCID]AA00693547
info:doi/10.1063/1.4864020
[isVersionOf] [URI]http://aip.scitation.org/doi/10.1063/1.4864020
[isVersionOf] [URI]http://scitation.aip.org/content/aip/journal/jap
Schools 大学院理工学研究科(工学)