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Cathodoluminescence study of optical inhomogeneity in si-doped algan epitaxial layers grown by low-pressure metalorganic vapor-phase epitaxy

Japanese Journal of Applied Physics Volume 52 Issue 8S Page 08JL07-
published_at 2013-08
Title
Cathodoluminescence study of optical inhomogeneity in si-doped algan epitaxial layers grown by low-pressure metalorganic vapor-phase epitaxy
Languages eng
Resource Type journal article
Publishers Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Date Issued 2013-08
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0021-4922
[ISSN]1347-4065
[NCID]AA12295836
info:doi/10.7567/JJAP.52.08JL07
[isVersionOf] [URI]http://iopscience.iop.org/1347-4065/
Schools 大学院理工学研究科(工学)