Effects of Si doping on optical properties of GaN epitaxial layers
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2
Page 123-127
published_at 2000-03
Title
GaN薄膜の光学特性におけるSi添加効果
Effects of Si doping on optical properties of GaN epitaxial layers
Creators
Sasaki Chiharu
Creators
Yamashita Tatsuya
Source Identifiers
Creator Keywords
GaN
Si-doping
Time-resolved photoluminescence
Lifetime
Optical properties of undoped and Si-doped GaN epitaxial layers grown by MOCVD have been studied by means of temperature- dependent and time-resolved photoluminescence spectroscopy. The intensity of band edge emission from Si-doped epitaxial layers was approximately one order of magnitude stronger than that from undoped epitaxial layers at 300 K. It was found that nonradiative recombination in GaN epitaxial layers was suppressed by Si-doping. The effects of Si-doping on luminescence properties of GaN epitaxial layers are discussed as a function of electron concentration.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2000-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部