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Pre-treatment of GaN substrate in Homoepitaxial growth by RF-MBE

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 Page 117-121
published_at 2000-03
A030050000204.pdf
[fulltext] 162 KB
Title
RF-MBE法ホモエピタキシャル成長におけるGaN基板の成長前表面処理
Pre-treatment of GaN substrate in Homoepitaxial growth by RF-MBE
Creators Kubo Shuichi
Creators Okazaki Tomokazu
Creators Manabe Shigeki
Creators Kurai Satoshi
Creators Taguchi Tsunemasa
Source Identifiers
Creator Keywords
RF-MBE GaN homoepitaxial growth radiative recombination of free excitons surface pre-treatment removal of the oxide
The heterointerface between sapphire and GaN is one of serious problems in the growth of GaN by MBE. To overcome this problem, we have performed homoepitaxial growth of GaN by RF-MBE. As a result, homoepitaxial GaN had the equivalent crystalline-quality of GaN substrate from X-ray diffraction measurement. Furthemore, an emission line of radiative recombination of free excitons from homoepitaxial was observed GaN in low temperature PL measurement. We concluded that the growth of high quality GaN film was achieved by homoepitaxial growth. We also studied the effect of surface pre-treatment of GaN substrate. As a result, we observed the increase of PL intensity of excitonic emission line from GaN with BHF etching, which was considered to be due to removal of the oxide on GaN substrate by BHF etching.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2000-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部