Effects of external uniaxial stress on stimulated emission from CdZnSe strained quantum wells
        Memoirs of the Faculty of Engineering, Yamaguchi University Volume 46 Issue 2
        Page 367-373
        
    published_at 1996-03
            Title
        
        CdZnSe 歪量子井戸構造における誘導放出光の一軸性応力効果
        Effects of external uniaxial stress on stimulated emission from CdZnSe strained quantum wells
        
    
        
            Source Identifiers
        
    
        Effects of external uniaxial stress on both green-blue spontaneous and stimulated emissions in a Cd_<0.20> Zn_<0.80>Se/ZnS_<0.04>Se_<0.96> multiple quantum well (L_W=2nm and L_B=5nm) have been investigated at 77K under high-density excitation. A stimulated emission line appearing in the vicinity of 503.1nm moved towards longer wavelength with increasing uniaxial compressive stress along <110> axis. On the other hand, the energy shift of spontaneous emission was much smaller than that of the stimulated emission with uniaxial stress. The observed energy shift in the stimulated emission can tentatively be interpreted in terms of the energy downshift of the localized exciton.
        
        
            Languages
        
            jpn
    
    
        
            Resource Type
        
        departmental bulletin paper
    
    
        
            Publishers
        
            山口大学工学部
    
    
        
            Date Issued
        
        1996-03
    
    
        
            File Version
        
        Version of Record
    
    
        
            Access Rights
        
        open access
    
    
            Relations
        
            
                
                
                [ISSN]0372-7661
            
            
                
                
                [NCID]AN00244228
            
    
        
            Schools
        
            工学部
    
                
