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Effects of external uniaxial stress on stimulated emission from CdZnSe strained quantum wells

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 46 Issue 2 Page 367-373
published_at 1996-03
KJ00000157050.pdf
[fulltext] 485 KB
Title
CdZnSe 歪量子井戸構造における誘導放出光の一軸性応力効果
Effects of external uniaxial stress on stimulated emission from CdZnSe strained quantum wells
Creators Miyake Takayuki
Creators Onodera Chikara
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Source Identifiers
Effects of external uniaxial stress on both green-blue spontaneous and stimulated emissions in a Cd_<0.20> Zn_<0.80>Se/ZnS_<0.04>Se_<0.96> multiple quantum well (L_W=2nm and L_B=5nm) have been investigated at 77K under high-density excitation. A stimulated emission line appearing in the vicinity of 503.1nm moved towards longer wavelength with increasing uniaxial compressive stress along <110> axis. On the other hand, the energy shift of spontaneous emission was much smaller than that of the stimulated emission with uniaxial stress. The observed energy shift in the stimulated emission can tentatively be interpreted in terms of the energy downshift of the localized exciton.
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1996-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools 工学部