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Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition

Technology reports of the Yamaguchi University Volume 5 Issue 5 Page 327-333
published_at 1996-12
KJ00004351184.pdf
[fulltext] 351 KB
Title
Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
Creators Yamamoto Takaho
Creators Nakamura Seiji
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Source Identifiers
High-quality ZnS epitaxial layers were grown on (100)-oriented GaAs substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) method. Dependence of VI/II flow ratio on the 4.2K photoluminescence (PL) properties of undoped ZnS layers was particularly investigated. The PL spectrum of the excellent sample grown under optimum conditions was dominated by the radiative recombination of free and donor-bound excitons. The I_1 line appears at 332nm and becomes intense in the sample grown at relatively high VI/II ratio. We tentatively suggest that the I_1 line which originates from a deep-acceptor bound-exciton transition may be related to Zn vacancies.
Subjects
工学 ( Other)
Languages eng
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1996-12
File Version Version of Record
Access Rights open access
Relations
[ISSN]0386-3433
[NCID]AA0086073X
Schools 工学部