Growth of aluminum film on GaAs (110) and GaP (110) observed by LEED

Growth of aluminum film on GaAs (110) and GaP (110) observed by LEED

Creators Miyata Naoyuki

Aluminum films deposited on air-cleaved and heat-cleaned surfaces of GaAs (110) and GaP (110) were in situ observed by LEED. The substrate temperature lay between 20℃ and 200℃. In systems Al-GaAs the first appearance of the LEED pattern was streaks extending along [001] direction of the substrate in the substrate temperature range from 150℃ to 200℃, the spacing between streaks corresponding to the normal Al-Al interatomic distance. After increasing the thickness {111} facets were formed. The bases of the facets were given to be (112) and (341), (431), the orientation of the former being Al(112)//GaAs(110) and Al[110]//GaAs[110]. At low temperature, only (111) facet was formed, the bases of the facet was drived to be (25 14 1) and (14 25 1). In systems Al-GaP, (111) facet was formed, the base of the facet was drived to be (341) and (431).

[ISSN]0386-3433

[NCID]AA0086073X