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High-rate deposition of Co-Cr films with perpendicular magnetic anisotropy by ECR sputtering

Journal of magnetism and magnetic materials Volume 235 Issue 1-3 Page 133-137
published_at 2001
Title
High-rate deposition of Co-Cr films with perpendicular magnetic anisotropy by ECR sputtering
Creators Yamamoto Setsuo
Creators Wada Hirofumi
Creators Kurisu Hiroki
Creators Matsuura Mitsuru
Creator Keywords
High-rate deposition ECR sputtering Electron-cyclotron-resonance Thin films
A sputtering apparatus using electron-cyclotron-resonance microwave plasma (ECR sputtering apparatus) was modified to increase the deposition rate of Co-Cr perpendicular magnetic anisotropy films. Microwave was introduced into plasma generation chamber in parallel to the magnetic field. The sputtering targets and the substrate were placed in an on-axis configuration. The deposition rate of 12.8 nm/min. was achieved using the modified ECR sputtering apparatus. It was found that a 40 nm thick Co-Cr, single-layered film with a perpendicular coercivity of 2000 Oe could be prepared using the apparatus.
Languages eng
Resource Type journal article
Publishers Elsevier
Date Issued 2001
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0304-8853
[NCID]AA00701394
info:doi/10.1016/S0304-8853(01)00324-9
[isVersionOf] [URI]http://www.sciencedirect.com/science/journal/03048853
Schools 大学院理工学研究科(工学)