Fabrication of Ni-Zn ferrite thin film using the low-target-voltage reactive ECR sputtering method
Journal of Magnetics Society of Japan Volume 29 Issue 4
Page 468-471
published_at 2005
Title
低電圧 ECR スパッタ法による Ni-Zn フェライト薄膜の作製
Fabrication of Ni-Zn ferrite thin film using the low-target-voltage reactive ECR sputtering method
Creators
田中 輝光
Creators
石田 元
Creators
下里 義博
Creators
岡田 繁信
Creators
松浦 満
Creator Keywords
ECR sputtering
Ni-Zn ferrite
thin film
low-target-voltage sputtering
Ni-Zn ferrite (100) thin films were deposited to investigate the effects of low-target-voltage sputtering using an electron cyclotron resonance (ECR) sputtering apparatus. Saturation magnetization equivalent to that for bulk Ni-Zn ferrite could be obtained at any target voltage. Full width at half-maximum of the rocking curves decreased with decreasing the target voltage in the range of ?400 to ?100 V. When the target voltage was ?50 V, Ni-Zn ferrite thin films showed relatively high coercivity and broad rocking curves. The reasons were considered to be the influence of impurity gas and unsuitable oxygen gas flow rate. The validity of low-target-voltage sputtering was confirmed for the reactive ECR sputtering method.
Languages
jpn
Resource Type
journal article
Publishers
日本応用磁気学会
Date Issued
2005
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0285-0192
[NCID]AN0031390X
[isVersionOf]
[URI]http://www.wdc-jp.com/msj/journal/index.html
Schools
大学院理工学研究科（工学）