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Fabrication of Ni-Zn ferrite thin film using the low-target-voltage reactive ECR sputtering method

Journal of Magnetics Society of Japan Volume 29 Issue 4 Page 468-471
published_at 2005
Title
低電圧 ECR スパッタ法による Ni-Zn フェライト薄膜の作製
Fabrication of Ni-Zn ferrite thin film using the low-target-voltage reactive ECR sputtering method
Creators 田中 輝光
Creators 石田 元
Creators Fujimori Hirotaka
Creators 下里 義博
Creators 岡田 繁信
Creators 松浦 満
Creators Yamamoto Setsuo
Creator Keywords
ECR sputtering Ni-Zn ferrite thin film low-target-voltage sputtering
Ni-Zn ferrite (100) thin films were deposited to investigate the effects of low-target-voltage sputtering using an electron cyclotron resonance (ECR) sputtering apparatus. Saturation magnetization equivalent to that for bulk Ni-Zn ferrite could be obtained at any target voltage. Full width at half-maximum of the rocking curves decreased with decreasing the target voltage in the range of ?400 to ?100 V. When the target voltage was ?50 V, Ni-Zn ferrite thin films showed relatively high coercivity and broad rocking curves. The reasons were considered to be the influence of impurity gas and unsuitable oxygen gas flow rate. The validity of low-target-voltage sputtering was confirmed for the reactive ECR sputtering method.
Languages jpn
Resource Type journal article
Publishers 日本応用磁気学会
Date Issued 2005
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0285-0192
[NCID]AN0031390X
info:doi/10.3379/jmsjmag.29.468
[isVersionOf] [URI]http://www.wdc-jp.com/msj/journal/index.html
Schools 大学院理工学研究科(工学)