Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration
Journal of applied physics Volume 115 Issue 5
Page 053509-
published_at 2014
Title
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration
Creators
Ushijima Fumitaka
Creators
Miyake Hideto
Creators
Hiramatsu Kazumasa
Languages
eng
Resource Type
journal article
Publishers
American Institute of Physics
Date Issued
2014
Rights
(C) 2014 AIP Publishing LLC()
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]0021-8979
[NCID]AA00693547
[isVersionOf]
[URI]http://aip.scitation.org/doi/10.1063/1.4864020
[isVersionOf]
[URI]http://scitation.aip.org/content/aip/journal/jap
Schools
大学院理工学研究科（工学）