Carrier dynamics in GaAs/Ga_＜1-x＞AlxAs quantum well

GaAs/Ga_＜1-x＞AlxAs 量子井戸での担体のダイナミクス

Carrier dynamics in GaAs/Ga_＜1-x＞AlxAs quantum well

Creators Miyoshi Tadaki

Creators Aoyagi Yoshinobu

Creators Segawa Yusaburo

Creators Namba Susumu

Creators Nunoshita Masahiro

Time characteristics of luminescence from quantum well have been examined using time-correlated single photon counting method. The decay time of the luminescence from single quantum well is shorter than that of bulk samples. The rapid decay is considered to reflect the enhancement of recombination due to localization of carriers. The decay time of the luminescence from multi quantum well is longer than that of the single quantum well and depends on wavelength. This dependence is explained by assuming the well size fluctuation.

[ISSN]0289-8411

[NCID]AN0035159X