Kai Ayako
Affiliate Master
Yamaguchi University
Room-temperature exciton luminescence from GaN films fabricated by microwave-excited N Plasma epitaxial growth
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 46 Issue 2
Page 361-365
published_at 1996-03
Title
マイクロ波窒素プラズマ励起種を用いた GaN 薄膜の成長と室温励起子発光
Room-temperature exciton luminescence from GaN films fabricated by microwave-excited N Plasma epitaxial growth
Creators
Okada K.
Creators
Taguchi T.
Creators
Taniguchi H.
Creators
Sasaki F.
Creators
Kobayashi S.
Creators
Tani T.
Source Identifiers
Gallium Nitride (GaN) films with a hexagonal structure were grown on aluminum nitride (AIN) substrates in gallium and nitrogen plasma exited by microwave power. The photoluminescence properties of the GaN films were studied at various temperatures as well as various excitation densities. A strong ultraviolet emission, which consisted of two components, was observed even at room temperature. On the basis of the spectral position as well as its temporal behavior, the origin of the two components was attributed to the radiative recombination of free and localized excitons.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
1996-03
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools
工学部