荻原千聡

Affiliate Master Yamaguchi University

Temperature variation of non-radiative recombination rate in a-Si : H films

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 12 Page 2574-2577

published_at 2012-12

Title

Temperature variation of non-radiative recombination rate in a-Si : H films

Creators Ogihara Chisato

Creators Morigaki Kazuo

Creator Keywords

amorphous silicon defects recombination light-induced effects

Languages eng

Resource Type journal article

Publishers Wiley-VCH Verlag GmbH & Co. KGaA

Date Issued 2012-12

File Version Not Applicable (or Unknown)

Access Rights metadata only access

Relations

[ISSN]1862-6351

[NCID]AA12375141

info:doi/10.1002/pssc.201200199

[isVersionOf] [URI]http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a

Schools 大学院理工学研究科（工学）