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Yamada Yoichi

Affiliate Master Yamaguchi University

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Applied physics letters Volume 101 Issue 4 Page 042110-
published_at 2012-07-23
Title
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
Creators Murotani Hideaki
Creators Akase Daiki
Creators Anai Koji
Creators Yamada Yoichi
Creators Miyake Hideto
Creators Hiramatsu Kazumasa
Languages eng
Resource Type journal article
Publishers American Institute of Physics
Date Issued 2012-07-23
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]0003-6951
[ISSN]1077-3118
[NCID]AA00543431
[NCID]AA11868096
info:doi/10.1063/1.4739431
[isVersionOf] [URI]http://apl.aip.org/
Schools 大学院理工学研究科(工学)