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Taguchi Tsunemasa

Affiliate Master Yamaguchi University

Effects of Si doping on optical properties of GaN epitaxial layers

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 Page 123-127
published_at 2000-03
A030050000205.pdf
[fulltext] 91.9 KB
Title
GaN薄膜の光学特性におけるSi添加効果
Effects of Si doping on optical properties of GaN epitaxial layers
Creators Sasaki Chiharu
Creators Yamashita Tatsuya
Creators Yamada Yoichi
Creators Taguchi Tsunemasa
Source Identifiers
Creator Keywords
GaN Si-doping Time-resolved photoluminescence Lifetime
Optical properties of undoped and Si-doped GaN epitaxial layers grown by MOCVD have been studied by means of temperature- dependent and time-resolved photoluminescence spectroscopy. The intensity of band edge emission from Si-doped epitaxial layers was approximately one order of magnitude stronger than that from undoped epitaxial layers at 300 K. It was found that nonradiative recombination in GaN epitaxial layers was suppressed by Si-doping. The effects of Si-doping on luminescence properties of GaN epitaxial layers are discussed as a function of electron concentration.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2000-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部