Taguchi Tsunemasa

Affiliate Master Yamaguchi University

Effects of Si doping on optical properties of GaN epitaxial layers

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 Page 123-127

published_at 2000-03

A030050000205.pdf

[fulltext] 91.9 KB

Title

GaN薄膜の光学特性におけるSi添加効果

Effects of Si doping on optical properties of GaN epitaxial layers

Creators Sasaki Chiharu

Creators Yamashita Tatsuya

Creators Yamada Yoichi

Creators Taguchi Tsunemasa

Source Identifiers

Creator Keywords

GaN Si-doping Time-resolved photoluminescence Lifetime

Optical properties of undoped and Si-doped GaN epitaxial layers grown by MOCVD have been studied by means of temperature- dependent and time-resolved photoluminescence spectroscopy. The intensity of band edge emission from Si-doped epitaxial layers was approximately one order of magnitude stronger than that from undoped epitaxial layers at 300 K. It was found that nonradiative recombination in GaN epitaxial layers was suppressed by Si-doping. The effects of Si-doping on luminescence properties of GaN epitaxial layers are discussed as a function of electron concentration.

Subjects

工学 ( Other)

Languages jpn

Resource Type departmental bulletin paper

Publishers 山口大学工学部

Date Issued 2000-03

File Version Version of Record

Access Rights open access

Relations

[ISSN]1345-5583

[NCID]AA11422756

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/

Schools 工学部