プラズマ酸化法で作製したCo-γFe_2O_3/NiO薄膜磁気ディスク

Co-γFe_2O_3/NiO thin film disks fabricated by plasma oxidization

Creators Yamamoto Setsuo

Creators 山時 照章

Creators Kurisu Hiroki

Creators 松浦 満

Creators 香嶋 純

Creators 中田 健一

Creators 柿原 康男

Creators 土井 孝紀

Creators 田万里 耕作

In the fabrication process of Co-γFe_2O_3/NiO thin film recording disks, new oxidization method using oxygen ions in a plasma was proposed to transform a CoO-Fe_3O_4 filem to a Co-γFe_2O_3 film. Remarkably effective oxidization was achieved by utilizaing oxygen ions produced in an electron-cyclotron-resonance microwave plasma, promotion of oxygen ion generation by Penning ionization effect using metastable He atoms, and neutralization for preventing static electricity of samples. This plasma oxidization method shortened the oxidization processing time to 10 seconds and lowered the process temperature to 150℃ for the 20nm thick CoO-Fe_3O_4 films. Almost same recording characteristics was obtained between the Co-γFe_2O_3/NiO disks prepared by the plasma oxidization method and a conventional heat oxidization method in air.

[ISSN]0285-0192

[NCID]AN0031390X

[isVersionOf] [URI]http://www.wdc-jp.com/msj/journal/index.html