ECRスパッタ法を用いたCo-Cr垂直磁気異方性膜の作製 ： 磁界によるプラズマ制御の効果

Preparation of Co-Cr films using electron-cyclotron resonance microwave plasma sputtering: Effects of plasma control using a magnetic field

Creators 中村 哲也

Creators Yamamoto Setsuo

Creators 佐藤 王高

Creators Kurisu Hiroki

Creators 松浦 満

Creators 前田 安

Creators 廣野 滋

Co-Cr perpendicular magnetic anisotropy films were deposited by sputtering using electron-cyclotron resonance microwave plasma. The effects of ion acceleration voltage for bombardment of the substrate during film deposition on the magnetic microstructure and magnetic properties of the Co-Cr films were investigated. The ion acceleration voltage was controlled by magnetic field distribution in a deposition chamber. Co-Cr films with a fine magnetic structure in which the compositional separation into a Cr-enriched region and a Co-enriched region was enhanced within grains were achieved under a cusp magnetic field in which the ion acceleration voltage was about 10 V.

[ISSN]0285-0192

[NCID]AN0031390X

info:doi/10.3379/jmsjmag.22.69

[isVersionOf] [URI]http://www.wdc-jp.com/msj/journal/index.html