レーザー原子層エピタキシーによるGaAsパターン化成長層の評価

Characterization of patterned epitaxial layers of GaAs grown by laser atomic layer epitaxy

Creators Miyoshi Tadaki

Creators Iimura Yasufumi

Creators Iwai Sohachi

Creators Aoyagi Yoshinobu

Creators Namba Susumu

Raman spectra were measured at 300K in GaAs crystal layers grown selectively on a substrate by laser atomic layer epitaxy to characterize their quality. Raman spectra of the peripheral parts of the epitaxial layers are similar to those of the central parts of the layers. This result indicates that these layers are of uniform quality.

[ISSN]0289-8411

[NCID]AN0035159X