レーザー単原子層成長法による成長層の特性評価

Characterization of epitaxial layers grown by laser atomic layer epitaxy

Creators Miyoshi Tadaki

Creators Iimura Yasufumi

Creators Iwai Sohachi

Creators Aoyagi Yoshinobu

Creators Segawa Yusaburo

Creators Namba Susumu

Raman spectra were measured at 300K in thin layers grown by laser atomic layer epitaxy in order to characterize the layers of alloy semiconductors. Two Raman lines were observed in Ga_<1-x>Al_xAs layers. The molar fractions x of Al were determined from the frequency shift of Raman lines: x=0.20 for the laser-irradiated region and x=0.35 for the nonirradiated region.

[ISSN]0289-8411

[NCID]AN0035159X