GaAs/Ga_＜0.6＞Al_＜0.4＞As 量子井戸での励起子ダイナミクスの電界効果

Effect of electric field on dynamics of excitons in GaAs/Ga_＜0.6＞Al_＜0.4＞As multi-quantum-well structure

Creators Miyoshi Tadaki

Creators Aoyagi Yoshinobu

Creators Yamada Atsushi

Creators Segawa Yusaburo

Creators Namba Susumu

Creators Sano Naokatsu

The decay time of luminescence from a multi-quantum well has been measured at 20K by using a CW mode-locked dye laser and a synchroscan-streak camera. The decay time is found to increase when an electric field is applied. The increase is considered to be attributable to the field-induced carrier separation. The present results are compared with those reported by other researchers.

[ISSN]0289-8411

[NCID]AN0035159X