Miyoshi Tadaki
Affiliate Master
Yamaguchi University
Carrier dynamics in GaAs/Ga_<1-x>AlxAs quantum well
レーザー科学研究 Volume 6
Page 145-148
published_at 1984
Title
GaAs/Ga_<1-x>AlxAs 量子井戸での担体のダイナミクス
Carrier dynamics in GaAs/Ga_<1-x>AlxAs quantum well
Creators
Aoyagi Yoshinobu
Creators
Segawa Yusaburo
Creators
Namba Susumu
Creators
Nunoshita Masahiro
Time characteristics of luminescence from quantum well have been examined using time-correlated single photon counting method. The decay time of the luminescence from single quantum well is shorter than that of bulk samples. The rapid decay is considered to reflect the enhancement of recombination due to localization of carriers. The decay time of the luminescence from multi quantum well is longer than that of the single quantum well and depends on wavelength. This dependence is explained by assuming the well size fluctuation.
Languages
jpn
Resource Type
journal article
Publishers
理化学研究所
Date Issued
1984
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]0289-8411
[NCID]AN0035159X
Schools
大学院理工学研究科(工学)