MOVPE Growth and Evaluation of High-performance N-polar GaN/AlGaN/AlN Heterostructure Field-Effect Transistors
Title
高性能N極性GaN/AlGaN/AlNヘテロ構造電界効果トランジスタのMOVPE成長と評価
MOVPE Growth and Evaluation of High-performance N-polar GaN/AlGaN/AlN Heterostructure Field-Effect Transistors
Degree
博士(工学)
Dissertation Number
創科博甲第218号
(2026-09-25)
Degree Grantors
Yamaguchi University
[kakenhi]15501
grid.268397.1
Creators
AINA HIYAMA BINTI ZAZULI
Resource Type
doctoral thesis
File Version
Not Applicable (or Unknown)
Access Rights
open access