Localized biexcitons in AlGaN ternary alloy semiconductors

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 56 Issue 1 Page 29-37

published_at 2005-10

A040056000104.pdf

[fulltext] 469 KB

Title

AlGaN混晶半導体における局在励起子分子

Localized biexcitons in AlGaN ternary alloy semiconductors

Creators Nakamura Kohzo

Creators Murotani Hideaki

Creators Yamada Yoichi

Creators Taguchi Tsunemasa

Source Identifiers

Creator Keywords

exciton biexciton localization biexciton binding energy Stokes shift delocalization

Excitonic optical properties of Ga-rich AlxGa1-xN ternary alloy epitaxial layers with aluminum compositions of x = 0.019, 0.038, 0.057, 0.077, and 0.092 have been studied by means of photoluminescence (PL), time-resolved PL, and PL excitation spectroscopy. The luminescence line due to radiative recombination of biexcitons was clearly observed for all of five samples. On the basis of two-photon absorption of biexcitons, a Stokes shift of biexcitons and binding energy of biexcitons were determined quantitatively as a function of aluminum composition. The biexciton localization due to alloy disorder resulted in a strong enhancement of the biexciton binding energy.

Languages jpn

Resource Type departmental bulletin paper

Publishers 山口大学工学部

Date Issued 2005-10

File Version Version of Record

Access Rights open access

Relations

[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/

Schools 工学部