Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 1
Page 57-61
published_at 2001-10
Title
In_xGa_1-xN/GaN 多重量子井戸構造におけるストークスシフトの温度依存性
Temperature dependence of Stokes shift in In_xGa_1-xN/GaN multiple quantum wells
Creators
Sasaki Chiharu
Creators
Iwata Masaki
Creators
Watanabe Satoshi
Creators
Minsky M. S.
Creators
Takeuchi Tetsuya
Creators
Yamada Norihide
Source Identifiers
Creator Keywords
In_xGa_1-xN
GaN multiple quantum wells
photoluminescence excitation
Stokes shift
compositional fluctuation
localization
Luminescence properties of InxGa1-xN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence excitation (PLE) spectroscopy. The clear peak due to the absorption of InxGa1-xN quantum wells was observed in the PLE spectrum of the MQW sample with x < 0.01 at 4 K, and the Stokes shift was estimated to be 63 meV. It was found that the Stokes shift was independent of temperature up to 300 K. This result suggests that the large Stokes shift cannot be explained only by the effect of carrier localization due to compositional fluctuation.
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
2001-10
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf]
[URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools
工学部