A high power InGaN-LED on an m-plane GaN substrate
Electronics and communications in Japan Volume 98 Issue 5
Page 15-22
published_at 2015-08-01
Title
A high power InGaN-LED on an m-plane GaN substrate
Creator Keywords
GaN
high power
InGaN
LED
MOCVD
solid state lighting
Languages
eng
Resource Type
journal article
Publishers
電気学会
Date Issued
2015-08-01
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]1942-9541
[NCID]AA12363914
[isVersionOf]
[URI]http://onlinelibrary.wiley.com
Schools
大学院理工学研究科(工学)