Si concentration dependence of structural inhomogeneities in Si-doped Al_xGa_1-_xN/Al_yGa_1-_yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency
Journal of applied physics Volume 116 Issue 23
Page 235703-1-235703-6
published_at 2014
Title
Si concentration dependence of structural inhomogeneities in Si-doped Al_xGa_1-_xN/Al_yGa_1-_yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency
Creators
Anai Koji
Creators
Miyake Hideto
Creators
Hiramatsu Kazumasa
Creators
Yamada Yoichi
Source Identifiers
[PISSN] 0021-8979
[NCID] AA00693547
Languages
eng
Resource Type
journal article
Publishers
American Institute of Physics
Date Issued
2014
File Version
Version of Record
Access Rights
open access
Schools
大学院理工学研究科（工学）