AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE
Journal of crystal growth Volume 350 Issue 1
Page 69-71
published_at 2012-07-01
Title
AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE
Creators
Nomura Takuya
Creators
Okumura Kenta
Creators
Miyake Hideto
Creators
Hiramatsu Kazumasa
Creators
Eryu Osamu
Creator Keywords
A2. homoepitaxial growth
A3. HVPE
B1. AlN
Languages
eng
Resource Type
journal article
Publishers
North-Holland
Elsevier Science
Date Issued
2012-07-01
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0022-0248
[NCID]AA00696341
[NCID]AA11531784
[isVersionOf]
[URI]http://www.sciencedirect.com/science/journal/00220248
Schools
大学院理工学研究科（工学）