High-rate deposition of Co-Cr films with perpendicular magnetic anisotropy by ECR sputtering
Journal of magnetism and magnetic materials Volume 235 Issue 1-3
Page 133-137
published_at 2001
Title
High-rate deposition of Co-Cr films with perpendicular magnetic anisotropy by ECR sputtering
Creator Keywords
High-rate deposition
ECR sputtering
Electron-cyclotron-resonance
Thin films
A sputtering apparatus using electron-cyclotron-resonance microwave plasma (ECR sputtering apparatus) was modified to increase the deposition rate of Co-Cr perpendicular magnetic anisotropy films. Microwave was introduced into plasma generation chamber in parallel to the magnetic field. The sputtering targets and the substrate were placed in an on-axis configuration. The deposition rate of 12.8 nm/min. was achieved using the modified ECR sputtering apparatus. It was found that a 40 nm thick Co-Cr, single-layered film with a perpendicular coercivity of 2000 Oe could be prepared using the apparatus.
Languages
eng
Resource Type
journal article
Publishers
Elsevier
Date Issued
2001
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0304-8853
[NCID]AA00701394
[isVersionOf]
[URI]http://www.sciencedirect.com/science/journal/03048853
Schools
大学院理工学研究科（工学）