Silicon Nitride Films by RF Reactive Sputtering
Memoirs of the Faculty of Engineering, Yamaguchi University Volume 29 Issue 1
Page 97-102
published_at 1978
Title
RF 反応性スパッタ法によるシリコン窒化膜
Silicon Nitride Films by RF Reactive Sputtering
Creators
Kurata Katsumasa
Creators
Miyata Naoyuki
Creators
Miyake Kiyoshi
Source Identifiers
Silicon nitride films (from 400A to 3700A in thickness) have been prepared on glass substrates by RF reactive sputtering of a silicon cathode in N_2 gas or Ar-N_2 gas mixtures. Gas pressure was in the range of 1&acd
Languages
jpn
Resource Type
departmental bulletin paper
Publishers
山口大学工学部
Date Issued
1978
File Version
Version of Record
Access Rights
open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools
工学部