Effects of Si doping on optical properties of GaN epitaxial layers

Optical properties of undoped and Si-doped GaN epitaxial layers grown by MOCVD have been studied by means of temperature- dependent and time-resolved photoluminescence spectroscopy. The intensity of band edge emission from Si-doped epitaxial layers was approximately one order of magnitude stronger than that from undoped epitaxial layers at 300 K. It was found that nonradiative recombination in GaN epitaxial layers was suppressed by Si-doping. The effects of Si-doping on luminescence properties of GaN epitaxial layers are discussed as a function of electron concentration.

GaN

Si-doping

Time-resolved photoluminescence

Lifetime