Effects of external uniaxial stress on stimulated emission from CdZnSe strained quantum wells

Effects of external uniaxial stress on both green-blue spontaneous and stimulated emissions in a Cd_<0.20> Zn_<0.80>Se/ZnS_<0.04>Se_<0.96> multiple quantum well (L_W=2nm and L_B=5nm) have been investigated at 77K under high-density excitation. A stimulated emission line appearing in the vicinity of 503.1nm moved towards longer wavelength with increasing uniaxial compressive stress along <110> axis. On the other hand, the energy shift of spontaneous emission was much smaller than that of the stimulated emission with uniaxial stress. The observed energy shift in the stimulated emission can tentatively be interpreted in terms of the energy downshift of the localized exciton.