Anodization of Si using ECR Plasma

The plasma anodization was carried out in electron cyclotron resonance (ECR) microwave plasma. The unifrom oxide layers with the same oxygen concentration as SiO_2 were obtained at low temperatures. The growth of the oxide layers was studied with relation to the electron temperature, electron density, and optical emission intensities from the activated particles in the ECR plasma, which were measured by a double probe method and an optical emission spectroscopy analysis, respectively. The result suggests that the generation of O^* atomic radicals plays an important role of the growth of oxide layers.