Growth of semi-polar{11-22} GaN on r-plane patterned sapphire substrates
published_at 2015
Title
r面サファイア加工基板を用いた半極性{11-22}GaNの成長に関する研究
Growth of semi-polar{11-22} GaN on r-plane patterned sapphire substrates
Degree
博士(工学)
Dissertation Number
理工博甲第648号
(2015-03-04)
Degree Grantors
Yamaguchi University
[kakenhi]15501
grid.268397.1
Creators
Furuya Hiroshi
Languages
jpn
Resource Type
doctoral thesis
Date Issued
2015
File Version
Not Applicable (or Unknown)
Access Rights
open access
Schools
大学院理工学研究科