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Photoluminescence and growth of ZnSe : N using radical species from microwave excited N plasma

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 45 Issue 2 Page 331-335
published_at 1995-03
KJ00000157015.pdf
[fulltext] 356 KB
Title
マイクロ波Nプラズマの励起種を用いたZnSe : Nの成長とフォトルミネッセンス
Photoluminescence and growth of ZnSe : N using radical species from microwave excited N plasma
Creators Yamamoto Kouichi
Creators Taguchi Tsunemasa
Source Identifiers
We have developed a new epitaxial growth method of ZnSe : N semiconductor films using radical species generated from microwave-excited nitrogen plasma. Excited species in the N plasma have been identified to be N atoms and N_2 molecular radicals using high-resolution optical emission spectroscopies. The growth was carried out onto ZnSe (100) substrates at a temperature of 350℃ under N pressure of 4 Torr. The obtained ZnSe homoepitaxial film shows that the predominant emission at 4.2K is due to the recombination of excitons bound to neutral acceptors (I_1^d line), whereas a donor-acceptor pair emission encompassing N acceptor seems to be extremely weak. Doping process of N acceptors during growth is discussed.
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 1995-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]0372-7661
[NCID]AN00244228
Schools 工学部