コンテンツメニュー

Taguchi Tsunemasa

Affiliate Master Yamaguchi University

Polarity control of GaN epitaxial layers in MBE growth

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2 Page 221-224
published_at 2002-03
A030052000213.pdf
[fulltext] 441 KB
Title
MBE 成長におけるGaN 薄膜の極性制御
Polarity control of GaN epitaxial layers in MBE growth
Creators Kubo Shuichi
Creators Tanabe Tomoyuki
Creators Konishi Masafumi
Creators Iwata Shiro
Creators Saimei Tsunekazu
Creators Kurai Satoshi
Creators Taguchi Tsunemasa
Source Identifiers
Creator Keywords
GaN MBE lattice polarity high-temperature-grown AlN buffer layers In doping
The mechanism of polarity control in molecular beam epitaxy (MBE) growth of GaN epitaxial layers has been investigated using N-face of bulk GaN crystal. The (6×6) reflection high-energy electron diffraction (RHEED) reconstruction patterns were observed from GaN epitaxial layers on high-temperature-grown buffer layers over N-face bulk GaN after cooling. On the other hand, the (2×2) RHEED reconstruction patterns were observed from GaN epitaxial layers on In-doped GaN epitaxial layers over N-face bulk GaN after cooling. These results suggest that N-polarity can be reversed to Ga-polarity by In doping but not by the deposition of high-temperature-grown buffer layers.
Subjects
工学 ( Other)
Languages jpn
Resource Type departmental bulletin paper
Publishers 山口大学工学部
Date Issued 2002-03
File Version Version of Record
Access Rights open access
Relations
[ISSN]1345-5583
[NCID]AA11422756
[isVersionOf] [URI]http://memoirs.lib-e.yamaguchi-u.ac.jp/
Schools 工学部