山口県大学共同リポジトリ

Si concentration dependence of structural inhomogeneities in Si-doped Al_xGa_1-_xN/Al_yGa_1-_yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency

Journal of applied physics Volume 116 Issue 23 pp. 235703-1 - 235703-6

published_at 2014

Creators : Kurai Satoshi Anai Koji Miyake Hideto Hiramatsu Kazumasa Yamada Yoichi Publishers : American Institute of Physics

Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Journal of applied physics Volume 115 Issue 5 pp. 053509 -

published_at 2014

Creators : Kurai Satoshi Ushijima Fumitaka Miyake Hideto Hiramatsu Kazumasa Yamada Yoichi Publishers : American Institute of Physics

Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration

Journal of applied physics Volume 112 Issue 3 pp. 033512 -

published_at 2012-08

Creators : Kurai Satoshi Shimomura Kazuhide Murotani Hideaki Yamada Yoichi Miyake Hideto Hiramatsu Kazumasa Publishers : American Institute of Physics

A novel colonoscope with high color-rendering white light-emitting diodes

Gastrointestinal endoscopy Volume 73 Issue 3 pp. 598 - 602

published_at 2011-03

Creators : Nishikawa Jun Yanai Hideo Okamoto Takeshi Higaki Shingo Hashimoto Shinichi Kurai Satoshi Sakaida Isao Publishers : Denver

Effects of initial growth conditions and cooling process on GaN epitaxial growth by RF-MBE

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 49 Issue 2 pp. 225 - 231

published_at 1999

Creators : Sugita Taiichi Kubo Shuichi Kawabe Akira Kurai Satoshi Yamada Yoichi Taguchi Tsunemasa Publishers : 山口大学工学部

Polarity control of GaN epitaxial layers in MBE growth

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2 pp. 221 - 224

published_at 2002-03

Creators : Kubo Shuichi Tanabe Tomoyuki Konishi Masafumi Iwata Shiro Saimei Tsunekazu Kurai Satoshi Taguchi Tsunemasa Publishers : 山口大学工学部

Homoepitaxial growth of III-nitride semiconductors on GaN single crystals by MBE

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 52 Issue 2 pp. 215 - 220

published_at 2002-03

Creators : Tanabe Tomoyuki Watanabe Tadashi Ono Motoi Namba Yasunari Kurai Satoshi Taguchi Tsunemasa Inoue Takayuki Kurita Hiroshi Publishers : 山口大学工学部

Pre-treatment of GaN substrate in Homoepitaxial growth by RF-MBE

Memoirs of the Faculty of Engineering, Yamaguchi University Volume 50 Issue 2 pp. 117 - 121

published_at 2000-03

Creators : Kubo Shuichi Okazaki Tomokazu Manabe Shigeki Kurai Satoshi Taguchi Tsunemasa Publishers : 山口大学工学部